In the artificial neural network composed by neuromorphic computing unit, the resistance of the memristor can be modulated dynamically and repeatedly under external stimuli, such as electric fields, magnetic fields, and light illumination, leading to variations in local conductivity and memory effects. Here we show, using an all-photonic memristor, that the memristance arises naturally in optical system in which the solid-state ionic transport is realized under a lowpower external incident light. These results show extremely stable multi-level storage weight and high signal to noise ratio. In all-photonic memristors, the light signal is employed as the extra stimuli of the memristor devices to ensure a large memory window and variation margin of multiple storage levels.